Shi Min is an expert in microelectronics and semiconductor devices. He is a Chinese American whose ancestral home is located in Wujiang, Jiangsu Province. Shi graduated from the Department of Mechanical and Electrical Engineering of National Taiwan University in 1957. He received his master’s degree from the University of Washington and doctorate degree from Stanford University in 1960 and 1963 respectively. Shi works as a professor of the Nanometer Components Laboratory of the Department of Electronic Engineering of National Taiwan Chiao Tung University and honorary professor of Soochow University in Suzhou, etc. He is an academician of the Academia Sinica in Taiwan. In 1995, he was elected as an academician of the National Academy of Engineering in USA. Shi has made great contributions to the development of modern microelectronics. He is also a leading voice in the field of physics and process technology of semiconductor devices. The nonvolatile MOSFET Shi invented in 1967 has become one of the leading products in the integrated circuit industry around the world. He has made quite a few creative achievements. It was Shi who first used electronic beams to produce MOSFET devices with the width of 0.15μm, discovered the relationship between collapse voltage and energy gaps, and established the maximum electric field indexes for microelectronic components. He is the author of such books as Semiconductor Device Physics and Semiconductor Devices: Physics and Technology, etc. In 1991, Shi’s basic and forward-looking contributions in the field of electronic components won him a J. J. Ebers Award issued by IEEE Electron Devices Society, the highest honor the Society offers. The year 1998 witnessed his election as a foreign academician of the Chinese Academy of Engineering.
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